2N3171H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3171H
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO-3
Búsqueda de reemplazo de transistor bipolar 2N3171H
2N3171H Datasheet (PDF)
2n3171h.pdf
isc Silicon PNP Power Transistor 2N3171HDESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.ABSOLUTE MAXIM
2n3171.pdf
isc Silicon PNP Power Transistor 2N3171DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C
2n3174.pdf
2N3174Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n3173.pdf
isc Silicon PNP Power Transistor 2N3173DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C
2n3172.pdf
isc Silicon PNP Power Transistor 2N3172DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C
2n3174.pdf
isc Silicon PNP Power Transistor 2N3174DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
