2N3171H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3171H
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO-3
Búsqueda de reemplazo de 2N3171H
2N3171H Datasheet (PDF)
2n3171h.pdf

isc Silicon PNP Power Transistor 2N3171HDESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.ABSOLUTE MAXIM
2n3171.pdf

isc Silicon PNP Power Transistor 2N3171DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C
2n3174.pdf

2N3174Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n3173.pdf

isc Silicon PNP Power Transistor 2N3173DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: S1806 | S2056 | 2SD669AD
History: S1806 | S2056 | 2SD669AD



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc2362 | 2sd468 | c2240 transistor | 2sc1918 | c1213 transistor | 2sc1400 replacement | 2sb817 | mn2488 datasheet