2N3171H - описание и поиск аналогов

 

2N3171H. Аналоги и основные параметры

Наименование производителя: 2N3171H

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 75 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 200 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 12

Корпус транзистора: TO-3

 Аналоги (замена) для 2N3171H

- подборⓘ биполярного транзистора по параметрам

 

2N3171H даташит

 ..1. Size:196K  inchange semiconductor
2n3171h.pdfpdf_icon

2N3171H

isc Silicon PNP Power Transistor 2N3171H DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIM

 8.1. Size:204K  inchange semiconductor
2n3171.pdfpdf_icon

2N3171H

isc Silicon PNP Power Transistor 2N3171 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C

 9.1. Size:12K  semelab
2n3174.pdfpdf_icon

2N3171H

2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.2. Size:173K  inchange semiconductor
2n3173.pdfpdf_icon

2N3171H

isc Silicon PNP Power Transistor 2N3173 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C

Другие транзисторы: UN511T, UN511V, UN511Z, FJP5027R, FJP5027O, ZDT690, ZDT705, ZDT758, 8550, 2N3772J, 2NC5566, 2SA1012D, 2SC5200H, 2SD1286-Z, 2SD1804L-T, 2SD2901, 2ST501T

 

 

 

 

↑ Back to Top
.