3DD100E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD100E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-66
Búsqueda de reemplazo de transistor bipolar 3DD100E
3DD100E Datasheet (PDF)
3dd100e.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dd100.pdf
3DD99(3DD100) NPN A B C D E PCM Tc=75 20 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICE=1mA 150 200 250 300 350 V V(BR)CEO ICE=1mA 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA
3dd100c.pdf
E Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMU
3dd100b.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD100BDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
3dd100d.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100DDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dd100a.pdf
isc Silicon NPN Power Transistor 3DD100ADESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS