All Transistors. 3DD100E Datasheet

 

3DD100E Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DD100E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-66

 3DD100E Transistor Equivalent Substitute - Cross-Reference Search

   

3DD100E Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
3dd100e.pdf

3DD100E 3DD100E

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.1. Size:149K  china
3dd100.pdf

3DD100E

3DD99(3DD100) NPN A B C D E PCM Tc=75 20 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICE=1mA 150 200 250 300 350 V V(BR)CEO ICE=1mA 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA

 8.2. Size:184K  inchange semiconductor
3dd100c.pdf

3DD100E 3DD100E

E Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMU

 8.3. Size:184K  inchange semiconductor
3dd100b.pdf

3DD100E 3DD100E

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD100BDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 8.4. Size:185K  inchange semiconductor
3dd100d.pdf

3DD100E 3DD100E

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100DDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.5. Size:186K  inchange semiconductor
3dd100a.pdf

3DD100E 3DD100E

isc Silicon NPN Power Transistor 3DD100ADESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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