3DD880X Todos los transistores

 

3DD880X Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD880X

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO-220C

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3DD880X datasheet

 ..1. Size:209K  inchange semiconductor
 3dd880x.pdf pdf_icon

3DD880X

isc Silicon NPN Power Transistors 3DD880X DESCRIPTION X DC Current Gain -h = 55-75@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 8.1. Size:212K  inchange semiconductor
 3dd880.pdf pdf_icon

3DD880X

isc Silicon NPN Power Transistors 3DD880 DESCRIPTION DC Current Gain -h = 60-300@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Otros transistores... 3DD167E , 3DD167F , 3DD200D , 3DD202A , 3DD202B , 3DD208 , 3DD523 , 3DD880 , 2N5401 , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , 3DF1F , 3DF20A , 3DF20B .

 

 

 

 

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