3DD880X Datasheet and Replacement
Type Designator: 3DD880X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO-220C
3DD880X Substitution
3DD880X Datasheet (PDF)
3dd880x.pdf

isc Silicon NPN Power Transistors 3DD880XDESCRIPTIONX: DC Current Gain -h = 55-75@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
3dd880.pdf

isc Silicon NPN Power Transistors 3DD880DESCRIPTIONDC Current Gain -h = 60-300@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: 3DD167E , 3DD167F , 3DD200D , 3DD202A , 3DD202B , 3DD208 , 3DD523 , 3DD880 , TIP41 , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , 3DF1F , 3DF20A , 3DF20B .
Keywords - 3DD880X transistor datasheet
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History: 2SC5824 | TIP100



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