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BFP420W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP420W

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.16 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 4.5 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.035 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 25000 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: SOT-343

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BFP420W Datasheet (PDF)

1.1. bfp420w.pdf Size:217K _inchange_semiconductor

BFP420W
BFP420W

isc Silicon NPN RF Transistor BFP420W DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15 V CBO

4.1. bfp420.pdf Size:70K _siemens

BFP420W
BFP420W

? SIEGET?25 BFP420 NPN Silicon RF Transistor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability ? SIEGET?25-Line Siemens Grounded Emitter Transistor- 25 GHz fT-Line ESD: Electrostatic discharge sensitive device, observe handling

 

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