BFP420W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP420W
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.16 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.035 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25000 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT-343
Búsqueda de reemplazo de transistor bipolar BFP420W
BFP420W Datasheet (PDF)
bfp420w.pdf
isc Silicon NPN RF Transistor BFP420WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in RF wideband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15 VCBO
bfp420.pdf
SIEGET25 BFP420NPN Silicon RF TransistorFor High Gain Low Noise AmplifiersFor Oscillators up to 10 GHzNoise Figure F = 1.05 dB at 1.8 GHzOutstanding Gms = 20 dB at 1.8 GHzTransition Frequency fT = 25 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sensitive device,observ
bfp420.pdf
BFP420Surface mount wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP420 is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz, high gain and low current characteristics make the devicesuitable for oscillators up to 10 GHz. It remain
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5308A | 2N5859
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