BFP420W Specs and Replacement
Type Designator: BFP420W
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.16 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT-343
BFP420W Substitution
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BFP420W datasheet
isc Silicon NPN RF Transistor BFP420W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15 V CBO ... See More ⇒
SIEGET 25 BFP420 NPN Silicon RF Transistor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor- 25 GHz fT-Line ESD Electrostatic discharge sensitive device, observ... See More ⇒
BFP420 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP420 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz, high gain and low current characteristics make the device suitable for oscillators up to 10 GHz. It remain... See More ⇒
Detailed specifications: 3DF20F , 3DK104B , 3DK104C , 3DK104D , 3DK104E , 3DK104F , A0718 , BD912I , 2N2222A , BU304F , BU305F , BU415 , BU457 , BU458 , BU459 , BUF405AF , BUL1203E .
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