BFP420W Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP420W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.16 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT-343
BFP420W Transistor Equivalent Substitute - Cross-Reference Search
BFP420W Datasheet (PDF)
bfp420w.pdf
isc Silicon NPN RF Transistor BFP420WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in RF wideband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15 VCBO
bfp420.pdf
SIEGET25 BFP420NPN Silicon RF TransistorFor High Gain Low Noise AmplifiersFor Oscillators up to 10 GHzNoise Figure F = 1.05 dB at 1.8 GHzOutstanding Gms = 20 dB at 1.8 GHzTransition Frequency fT = 25 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sensitive device,observ
bfp420.pdf
BFP420Surface mount wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP420 is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz, high gain and low current characteristics make the devicesuitable for oscillators up to 10 GHz. It remain
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