BU415 Todos los transistores

 

BU415 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU415

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 4

Empaquetado / Estuche: TO-3

Búsqueda de reemplazo de transistor bipolar BU415

 

BU415 Datasheet (PDF)

1.1. bu415b.pdf Size:204K _inchange_semiconductor

BU415
BU415

isc Silicon NPN Power Transistor BU415B DESCRIPTION ·Collector-Emitter Sustaining Voltag- : V = 400V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Coll

1.2. bu415.pdf Size:200K _inchange_semiconductor

BU415
BU415

isc Silicon NPN Power Transistor BU415 DESCRIPTION ·Collector-Emitter Sustaining Voltag- : V = 400V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Colle

 

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