BU415 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU415
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO-3
BU415 Transistor Equivalent Substitute - Cross-Reference Search
BU415 Datasheet (PDF)
1.1. bu415b.pdf 
Size:91K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU415B DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Col
1.2. bu415.pdf Size:200K _inchange_semiconductor
isc Silicon NPN Power Transistor BU415 DESCRIPTION ·Collector-Emitter Sustaining Voltag- : V = 400V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Colle
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
