All Transistors. BU415 Datasheet

 

BU415 Datasheet, Equivalent, Cross Reference Search

Type Designator: BU415

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO-3

BU415 Transistor Equivalent Substitute - Cross-Reference Search

 

BU415 Datasheet (PDF)

1.1. bu415b.pdf Size:91K _inchange_semiconductor

BU415
BU415

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU415B DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Col

1.2. bu415.pdf Size:200K _inchange_semiconductor

BU415
BU415

isc Silicon NPN Power Transistor BU415 DESCRIPTION ·Collector-Emitter Sustaining Voltag- : V = 400V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Colle

 

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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