BU415 Datasheet. Specs and Replacement

Type Designator: BU415  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO-3

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BU415 datasheet

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BU415

isc Silicon NPN Power Transistor BU415 DESCRIPTION Collector-Emitter Sustaining Voltag- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle... See More ⇒

 0.1. Size:204K  inchange semiconductor

 bu415b.pdf pdf_icon

BU415

isc Silicon NPN Power Transistor BU415B DESCRIPTION Collector-Emitter Sustaining Voltag- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

Detailed specifications: 3DK104D, 3DK104E, 3DK104F, A0718, BD912I, BFP420W, BU304F, BU305F, TIP3055, BU457, BU458, BU459, BUF405AF, BUL1203E, FJL6820, KT8232A, KT8232B

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