BU415 PDF Specs and Replacement
Type Designator: BU415
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO-3
BU415 Substitution
BU415 PDF detailed specifications
bu415.pdf
isc Silicon NPN Power Transistor BU415 DESCRIPTION Collector-Emitter Sustaining Voltag- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle... See More ⇒
bu415b.pdf
isc Silicon NPN Power Transistor BU415B DESCRIPTION Collector-Emitter Sustaining Voltag- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
Detailed specifications: 3DK104D , 3DK104E , 3DK104F , A0718 , BD912I , BFP420W , BU304F , BU305F , 2SD1047 , BU457 , BU458 , BU459 , BUF405AF , BUL1203E , FJL6820 , KT8232A , KT8232B .
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