2SA1136 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1136
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 120 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 135 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SA1136
2SA1136 Datasheet (PDF)
2sa1135.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2sa1133 2sa1133a.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1133.pdf
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isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta
2sa1135.pdf
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isc Silicon PNP Power Transistor 2SA1135DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2665Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sa1133 2sa1133a.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base
2sa1133a.pdf
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isc Silicon PNP Power Transistor 2SA1133ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .