2SA1136 Datasheet and Replacement
Type Designator: 2SA1136
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
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2SA1136 Datasheet (PDF)
2sa1135.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2sa1133 2sa1133a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1133.pdf

isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta
Datasheet: 2SA1126 , 2SA1127 , 2SA1128 , 2SA1129 , 2SA113 , 2SA1133 , 2SA1133A , 2SA1135 , 2SC2625 , 2SA1137 , 2SA1138 , 2SA114 , 2SA1141 , 2SA1142 , 2SA1143 , 2SA1144 , 2SA1145 .
History: 2G201 | 2SC1030 | NPS930R | BFG540-X | BD550 | 2N1094 | BLY91A
Keywords - 2SA1136 transistor datasheet
2SA1136 cross reference
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History: 2G201 | 2SC1030 | NPS930R | BFG540-X | BD550 | 2N1094 | BLY91A



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