UPA801TC-FB Todos los transistores

 

UPA801TC-FB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UPA801TC-FB

Código: 70

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3000 MHz

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: SOT-363

Búsqueda de reemplazo de transistor bipolar UPA801TC-FB

 

UPA801TC-FB Datasheet (PDF)

3.1. upa801t.pdf Size:51K _update_bjt

UPA801TC-FB
UPA801TC-FB

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High g

3.2. upa801t.pdf Size:177K _nec

UPA801TC-FB
UPA801TC-FB

NPN SILICON HIGH UPA801T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE856 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE: 2.1 0.1 NF = 1.2 dB TYP at 1 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz HIGH COLLECTOR CURRENT: 100mA 1 6 0.65 2.0 0.2 0.2 (All Leads) 5 2 DESCRIPTION 1.3

 4.1. upa801 r24 r25 sot363.pdf Size:32K _nec

UPA801TC-FB
UPA801TC-FB

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD The PA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.10.1 FEATURES 1.250.1 Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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