UPA801TC-FB Datasheet, Equivalent, Cross Reference Search

UPA801TC-FB Transistor Equivalent Substitute - Cross-Reference Search

UPA801TC-FB Datasheet (PDF)

3.1. upa801t.pdf Size:51K _update_bjt

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High g

3.2. upa801t.pdf Size:177K _nec

NPN SILICON HIGH UPA801T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) � SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE856 Die in a 2 mm x 1.25 mm package (Top View) � LOW NOISE FIGURE: 2.1 � 0.1 NF = 1.2 dB TYP at 1 GHz 1.25 � 0.1 � HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz � HIGH COLLECTOR CURRENT: 100mA 1 6 0.65 2.0 � 0.2 0.2 (All Leads) 5 2 DESCRIPTION 1.3

 4.1. upa801 r24 r25 sot363.pdf Size:32K _nec

PRELIMINARY DATA SHEET SILICON TRANSISTOR �PA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD The �PA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.1�0.1 FEATURES 1.25�0.1 � Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3

LIST

Last Update

BJT: YZ21 | WT062 | TL142 | TIP3055T | TIP2955T | MN638S | MJE340T | MJE3055AT | MJ10012T | KTD1945 | KTC2202 | KTC2200 | KSD880W | BUX47AFI | BUX18A | BUW12W | BUW12AW | BUW11W | BUW11AW | BUV48BFI |