2SA1261-Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SA1261-ZDESCRIPTIONHigh switching speedLow Collector-Emitter Saturation Voltage-: VCE(sat)= -0.6V(Max)@ IC= -5A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC3157APPLICATIONSHigh speed high voltage switching industrial useDC/DC convertersABSOLUTE MAX

JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220) and symbol3 BaseAbsolu

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency p

isc Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switchin