2SAR586D3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SAR586D3 PNP -5.0A -80V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO -80V IC -5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary NPN Types 2SCR586D3. 3) Low VCE(sat) VCE(sat)=-320mV(Max.). (IC/IB=-2A/-100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging spec

isc Silicon PNP Power Transistor 2SAR586D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.32V@(I =-2A,I =-100mA) CE(sat) C B Complementary NPN types 2SCR586D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

2SAR553P FRA Datasheet Middle Power Transistor (-50V / -2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage VCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

2SAR513P5 Datasheet Middle Power Transistors(-50V / -1A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-500mA/-25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging spe

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MC Driver Packaging specifications Inner circuit (Unit mm) Package T

2SAR552P5 Datasheet Middle Power Transistors (-30V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat) =-400mV (Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging sp

Midium Power Transistors (-80V / -0.7A) 2SAR514P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MD Driver Packaging specifications Inner circuit (Unit mm) Package

2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -1.5A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR554R 3)Low VCE(sat) VCE(sat)=-400mV (Max.) (IC/IB=-500mA/-25mA) lApplication l LOW FREQUENCY AMPLIFIER, H

2SAR513P 2SAR513PFRA Datasheet PNP -1.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -50V Base IC Collector -1.0A Emitter 2SAR513P 2SAR513PFRA lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SCR513PFRA 2) Complementary NPN Types 2SCR513P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead F

General purpose transistor(-50V,-0.1A) 2SAR523M/2SAR523EB/2SAR523UB Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol PB Applications EMT3F Switch, LED driver (3) Packaging specifications (1) (2) Package VMT3 EMT3F UMT3F Abbreviated symbol PB Packaging

2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -0.7A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR514R 3)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-300mA/-15mA) lApplication l LOW FREQUENCY AMP

2SAR552P 2SAR552PFRA Datasheet PNP -3.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -30V Base IC -3.0A Collector Emitter 2SAR552PFRA 2SAR552P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR552P 2SCR552PFRA 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -1A/ -50mA) 4) Lead Fr

2SAR553R Datasheet PNP -2.0A -50V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -50V Base IC -2.0A Emitter 2SAR553R lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR553R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

2SAR533P FRA Datasheet Middle Power Transistor(-50V / -3A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPack

2SAR512P FRA Datasheet Middle Power Transistor(-30V/-2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPac

2SAR533P Data Sheet PNP -3.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC -3.0A Collector Emitter 2SAR533P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR533P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplicatio

2SAR554P Data Sheet PNP -1.5A -80V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -80V Base IC -1.5A Collector Emitter 2SAR554P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR554P 3) Low VCE(sat) VCE(sat)= -0.40V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplica

2SAR512P5 Datasheet Medium Power Transistors(-30V/-2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif

Midium Power Transistors ( 50V / 3A) 2SAR533D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 (2) 2) High speed switching 0.75 (3) (1) Structure 0.65 (1) Base 0.9 2.3 2.3 (1) (2) (3) 0.5 PNP Silicon epitaxial planar transistor (2) Collector 1.0 (3) Emitter In

2SAR553P HZG Middle Power Transistor (-50V / -2A) Datasheet lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat) = -400mV (Max.)(IC/ IB=-700mA/-35mA) 2)High speed switching 3)AEC-Q101 Qualified lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

2SAR544P Data Sheet PNP -2.5A -80V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -2.5A Emitter 2SAR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR544P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplication

2SAR502EB / 2SAR502UB Datasheet PNP -500mA -30V General Purpose Transistors lOutline EMT3F UMT3F Parameter Value Collector Collector VCEO -30V Base Base IC -500mA Emitter Emitter 2SAR502UB 2SAR502EB (SC-85) (SC-89) lFeatures 1) General Purpose. 2) Complementary NPN Types 2SCR502EB (EMT3F) / 2SCR502UB (UMT3F) 3) Large collector current Ic=max.500mA 4) Lo

2SAR572D Datasheet PNP -5.0A -30V Middle Power Transistor lOutline l Parameter Value CPT VCEO -30V IC -5A 2SAR572D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR572D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-2A/-100mA) 4) Lead

2SAR514PFRA 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -0.7A Emitter 2SAR514P 2SAR514PFRA lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SCR514PFRA 2) Complementary NPN Types 2SCR514P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -300mA/ -15mA) 4) Lead

Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 (SC-63) 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 2) High speed switching Structure PNP Silicon epitaxial planar transistor 0.75 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 Applications 1.0 Driver Packaging spe

2SAR544P 2SAR544PFRA Data Sheet PNP -2.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -2.5A Emitter 2SAR544PFRA 2SAR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR544P 2SCR544PFRA 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS

2SAR542F3 Datasheet PNP -3.0A -30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO -30V IC -3A 2SAR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=-0.20V(Max.). (IC/IB=-1A/-50mA) 3) High collector current. IC=-3A(max),

2SAR542P Data Sheet PNP -5.0A -30V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -30V Base Collector IC -5.0A Emitter 2SAR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR542P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -2A/ -100mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications

2SAR554P5 Datasheet Middle Power Transistors (-80V / -1.5V) lOutline l SOT-89 Parameter Value SC-62 VCEO -80V IC -1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=-400mV (Max.) (IC/IB=-500mA/-25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackag

2SAR562F3 Datasheet PNP -6A -30V Middle Power Transistor lOutline HUML2020L3 Parameter Value Collector VCEO -30V Collector Base IC -6A Emitter Emitter Base lFeatures 2SAR562F3 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)= -300mV(Max.) (IC/IB= -3A/ -60mA) 3) High collector current IC = -6A (max) , ICP = -7A (max) 4) Leadless small SMD package "HU

2SAR512R Datasheet PNP -2.0A -30V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -30V Base IC -2.0A Emitter 2SAR512R (SC-96) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR512R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

General purpose transistor(-20V,-0.2A) 2SAR522M / 2SAR522EB / 2SAR522UB Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol PC Applications EMT3F Switch, LED driver (3) Packaging specifications Package VMT3 EMT3F UMT3F (1) (2) Packaging Type Taping Tap

Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor TSMT3 Features 1) Low saturation voltage (3) VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) (2) (1) Base Applications (2) Emitter (3) Collector Abbreviated symbol MR Driver Packaging specifications Inner

Medium Power Transistors (-30V / -2A) 2SAR512P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor MPT3 Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) (1) (2) (3) 2) High speed switching (1)Base Applications (2)Collector Abbreviated symbol MB (3)Emitter Driver Packaging specifications Inner circuit

2SAR573D FHG Datasheet PNP -3.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline l TO-252 Parameter Value SC-63 VCEO -50V IC -3A CPT lFeatures lInner circuit l l 1) Suitable for Middle Power Driver. 2) Complementary NPN Types 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) lApplication l

2SAR553P Data Sheet PNP -2.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC Collector -2.0A Emitter 2SAR553P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR553P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplica

2SAR523M / 2SAR523EB / 2SAR523UB Datasheet PNP -100mA -50V General Purpose Transistor lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -100mA 2SAR523M 2SAR523EB (VMT3) (EMT3F) SOT-323FL 2SAR523UB (UMT3F) lFeatures lInner ci

2SAR553P5 Datasheet Midium Power Transistors (-50V / -2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage, typically VCE(sat) = -0.4V (Max.) (IC/ IB= -700mA / -35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging

2SAR542P FRA Datasheet Middle Power Transistor (-30V / -5A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat) =-400mV (Max.) (IC/IB=-2A/-100mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING l

2SAR572D3 PNP -5.0A -30V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO -30V IC -5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary NPN Types 2SCR572D3. 3) Low VCE(sat) VCE(sat)=-400mV(Max.). (IC/IB=-2A/-100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging spec

2SAR513R Datasheet PNP -1.0A -50V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -50V IC -1A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR513R 3)Low VCE(sat) VCE(sat)=-400mV(Max.) (IC/IB=-500A/-25mA) lApplication l LOW FREQUENCY AMPLIFIER, HIGH

2SAR574D Datasheet PNP -2.0A -80V Middle Power Transistor lOutline l Parameter Value CPT VCEO -80V IC -2A 2SAR574D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR574D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) 4) Lead

2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base IC -1.5A Collector Emitter 2SAR554PFRA 2SAR554P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR554P 2SCR554PFRA 3) Low VCE(sat) VCE(sat)= -0.40V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead

2SAR533P5 Datasheet Medium Power Transistors(-50V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif

Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MF Driver Packaging specifications Inner circuit (Unit mm) Package Tapi

Midium Power Transistors (-50V / -4A) 2SAR543D Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

2SAR573D Datasheet PNP -3.0A -50V Middle Power Transistor lOutline l Parameter Value CPT VCEO -50V IC -3A 2SAR573D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) 4) Lead

2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -2.5A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR544R 3)Low VCE(sat) VCE(sat)=-400mV (Max.) (IC/IB=-1A/-50mA) lApplication l LOW FREQUENCY AMPLIFIER, HIGH

isc Silicon PNP Power Transistor 2SAR572D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-2A,I =-0.1A) CE(sat) C B Complementary NPN types 2SCR572D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon PNP Power Transistor 2SAR574D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-1A,I =-50mA) CE(sat) C B Complementary NPN types 2SCR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon PNP Power Transistor 2SAR573D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-1A,I =-50mA) CE(sat) C B Complementary NPN types 2SCR573D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE