2SB1468 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1468
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO220ML
Búsqueda de reemplazo de transistor bipolar 2SB1468
2SB1468 Datasheet (PDF)
2sb1468.pdf
isc Silicon PNP Power Transistor 2SB1468DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -5A, I = -0.25A)CE(sat) C BComplement to Type 2SD2219Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed inverters,converters.ABSOL
2sb1465.pdf
PRELIMINARY DATA SHEETDARLINGTON POWER TRANSISTOR2SB1465PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)frequency power amplifier and low-speed switching. This transistoris ideal for use in a direct drive from IC output to relay driv
2sb1462 e.pdf
Transistor2SB1462Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD22161.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter S
2sb1462.pdf
Transistors2SB1462Silicon PNP epitaxial planar typeFor general amplificationUnit: mm0.2+0.1 0.15+0.1Complementary to 2SD22160.05 0.053 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.5) (0.5)1.00.11.60.15 Absolute Maximum Rat
2sb1463 e.pdf
Transistor2SB1463Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD22401.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2
2sb1462j e.pdf
Transistor2SB1462JSilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD2216J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.+0.05Absolute Maximum Ratings (Ta=25C)
2sb1463.pdf
Transistors2SB1463Silicon PNP epitaxial planar typeUnit: mmFor high breakdown voltage low-frequency amplification0.2+0.1 0.15+0.10.05 0.05Complementary to 2SD22403 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV1 2(0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and1.00.1automatic insertion t
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
