2SC5887 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5887

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO-220ML

 Búsqueda de reemplazo de 2SC5887

- Selecciónⓘ de transistores por parámetros

 

2SC5887 datasheet

 ..1. Size:37K  sanyo
2sa2098 2sa2098 2sc5887.pdf pdf_icon

2SC5887

Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu

 ..2. Size:173K  inchange semiconductor
2sc5887.pdf pdf_icon

2SC5887

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Speed Switching Low Saturation Voltage Complement to Type 2SA2098 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers.

 8.1. Size:144K  toshiba
2sc5886a.pdf pdf_icon

2SC5887

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit mm DC/DC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.22 V (max) High-speed switching tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Coll

 8.2. Size:123K  toshiba
2sc5886.pdf pdf_icon

2SC5887

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation V = 0.22 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect

Otros transistores... 2SC4574, 2SC4652, 2SC4799, 2SC4847, 2SC4848, 2SC4850, 2SC5128, 2SC5696, D880, 2SCR586D3, 2SD1047E, 2SD133, 2SD1885C, 2SD2328, 2SD2397, 2SD2422, 2SD2490