All Transistors. 2SC5887 Datasheet

 

2SC5887 Datasheet and Replacement


   Type Designator: 2SC5887
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO-220ML
 

 2SC5887 Substitution

   - BJT ⓘ Cross-Reference Search

   

2SC5887 Datasheet (PDF)

 ..1. Size:37K  sanyo
2sa2098 2sa2098 2sc5887.pdf pdf_icon

2SC5887

Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu

 ..2. Size:173K  inchange semiconductor
2sc5887.pdf pdf_icon

2SC5887

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5887DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Speed SwitchingLow Saturation VoltageComplement to Type 2SA2098100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, lamp drivers, motor drivers.

 8.1. Size:144K  toshiba
2sc5886a.pdf pdf_icon

2SC5887

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mmDC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColl

 8.2. Size:123K  toshiba
2sc5886.pdf pdf_icon

2SC5887

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CSC1815GR | 2N5618 | LDA417 | FMMTA70 | BC172A | 2N6272 | BSV16-16

Keywords - 2SC5887 transistor datasheet

 2SC5887 cross reference
 2SC5887 equivalent finder
 2SC5887 lookup
 2SC5887 substitution
 2SC5887 replacement

 

 
Back to Top

 


 
.