2SA114 Todos los transistores

 0.1. Size:138K  toshiba
 2sa1145.pdf

2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC2705. Small Collector Output Capacitance Cob = 2.5 pF (typ.) High Transition Frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Coll

 0.2. Size:64K  nec
 2sa1142.pdf

 0.3. Size:32K  no
 2sa1141 2sc2681 2sc2681.pdf

 0.4. Size:158K  jmnic
 2sa1141.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

 0.5. Size:147K  jmnic
 2sa1146.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBO

 0.6. Size:147K  jmnic
 2sa1142.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol 3 Base Absolute maximum ratin

 0.7. Size:145K  jmnic
 2sa1147.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= )

 0.8. Size:238K  lge
 2sa1145.pdf

2SA1145 TO-92MOD Transistor (PNP) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 Complementary to 2SC2705 Small collector output capacitance Cob=2.5pF(Typ.) 8.400 8.800 High transition frequency fT=200MHz(Typ.) 0.900 1.100 0.400 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 13.800 Symbol Parameter Value Units 14.200 VCBO

 0.9. Size:197K  cn sptech
 2sa1141r 2sa1141q.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1141 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -115V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2681 APPLICATIONS Audio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -115 V CBO

 0.10. Size:222K  inchange semiconductor
 2sa1141.pdf

isc Silicon PNP Power Transistor 2SA1141 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -115V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2681 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 0.11. Size:222K  inchange semiconductor
 2sa1146.pdf

isc Silicon PNP Power Transistor 2SA1146 DESCRIPTION Collector-Emitter Breakdown Voltage- V =- 140V(Min) (BR)CEO Complement to Type 2SC2706 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency low power amplifier applications Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM R

 0.12. Size:207K  inchange semiconductor
 2sa1145.pdf

isc Silicon PNP Power Transistor 2SA1145 DESCRIPTION Low collector output capacitance High frequency Complement to 2SC2705 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CBO V Collector-Emitte

 0.13. Size:173K  inchange semiconductor
 2sa1142.pdf

isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION Low Collector Saturation Voltage High voltage,f T Complement to Type 2SC2682 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO

 0.14. Size:208K  inchange semiconductor
 2sa1147.pdf

isc Silicon PNP Power Transistor 2SA1147 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SC2707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S