All Transistors. 2SA114 Datasheet

 

2SA114 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA114
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 34 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO44

 2SA114 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA114 Datasheet (PDF)

 0.1. Size:138K  toshiba
2sa1145.pdf

2SA114 2SA114

2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC2705. Small Collector Output Capacitance: Cob = 2.5 pF (typ.) High Transition Frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColl

 0.2. Size:64K  nec
2sa1142.pdf

2SA114

 0.3. Size:32K  no
2sa1141 2sc2681 2sc2681.pdf

2SA114

 0.4. Size:158K  jmnic
2sa1141.pdf

2SA114 2SA114

JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

 0.5. Size:147K  jmnic
2sa1146.pdf

2SA114 2SA114

JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBO

 0.6. Size:147K  jmnic
2sa1142.pdf

2SA114 2SA114

JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol3 BaseAbsolute maximum ratin

 0.7. Size:145K  jmnic
2sa1147.pdf

2SA114 2SA114

JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

 0.8. Size:238K  lge
2sa1145.pdf

2SA114 2SA114

2SA1145 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE Features5.8006.200 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) 8.4008.800 High transition frequency: fT=200MHz(Typ.) 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.60013.800Symbol Parameter Value Units14.200VCBO

 0.9. Size:197K  cn sptech
2sa1141r 2sa1141q.pdf

2SA114 2SA114

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681APPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -115 VCBO

 0.10. Size:222K  inchange semiconductor
2sa1141.pdf

2SA114 2SA114

isc Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.11. Size:222K  inchange semiconductor
2sa1146.pdf

2SA114 2SA114

isc Silicon PNP Power Transistor 2SA1146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =- 140V(Min)(BR)CEOComplement to Type 2SC2706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM R

 0.12. Size:207K  inchange semiconductor
2sa1145.pdf

2SA114 2SA114

isc Silicon PNP Power Transistor 2SA1145DESCRIPTIONLow collector output capacitanceHigh frequencyComplement to 2SC2705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency amplifier applicationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emitte

 0.13. Size:173K  inchange semiconductor
2sa1142.pdf

2SA114 2SA114

isc Silicon PNP Power Transistor 2SA1142DESCRIPTIONLow Collector Saturation VoltageHigh voltage,fTComplement to Type 2SC2682Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBO

 0.14. Size:208K  inchange semiconductor
2sa1147.pdf

2SA114 2SA114

isc Silicon PNP Power Transistor 2SA1147DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2707Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: 2SA1129 , 2SA113 , 2SA1133 , 2SA1133A , 2SA1135 , 2SA1136 , 2SA1137 , 2SA1138 , TIP127 , 2SA1141 , 2SA1142 , 2SA1143 , 2SA1144 , 2SA1145 , 2SA1145O , 2SA1145Y , 2SA1146 .

 

 
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