2SD133 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD133

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO220

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2SD133 datasheet

 ..1. Size:209K  inchange semiconductor
 2sd133.pdf pdf_icon

2SD133

isc Silicon NPN Power Transistor 2SD133 DESCRIPTION Collector Current I = 7A C Collector-Emitter BreakdownVoltage- V = 120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

 0.1. Size:47K  panasonic
 2sd1330 e.pdf pdf_icon

2SD133

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.4

 0.2. Size:84K  panasonic
 2sd1330.pdf pdf_icon

2SD133

Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm For muting 2.5 0.1 6.9 0.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a

 0.3. Size:204K  inchange semiconductor
 2sd1338.pdf pdf_icon

2SD133

isc Silicon NPN Power Transistor 2SD1338 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

MOSTRAR MÁS

Otros transistores... 2SC4847, 2SC4848, 2SC4850, 2SC5128, 2SC5696, 2SC5887, 2SCR586D3, 2SD1047E, 2N4401, 2SD1885C, 2SD2328, 2SD2397, 2SD2422, 2SD2490, 2SD2524, 2SD2593, 2SD2633