All Transistors. 2SD133 Datasheet

 

2SD133 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD133
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220

 2SD133 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD133 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
2sd133.pdf

2SD133
2SD133

isc Silicon NPN Power Transistor 2SD133DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

 0.1. Size:47K  panasonic
2sd1330 e.pdf

2SD133
2SD133

Transistor2SD1330Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting6.9 0.1 2.5 0.1For DC-DC converter1.51.5 R0.9 1.0R0.9FeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.0.85M type package allowing easy automatic and manual insertion as0.55 0.1 0.4

 0.2. Size:84K  panasonic
2sd1330.pdf

2SD133
2SD133

Transistors2SD1330Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mmFor muting2.50.16.90.1For DC-DC converter(1.0)(1.5)(1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a

 0.3. Size:204K  inchange semiconductor
2sd1338.pdf

2SD133
2SD133

isc Silicon NPN Power Transistor 2SD1338DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 0.4. Size:212K  inchange semiconductor
2sd1336.pdf

2SD133
2SD133

isc Silicon NPN Darlington Power Transistor 2SD1336DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 4VFE C CEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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