2SD2422 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2422
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 85 pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar 2SD2422
2SD2422 Datasheet (PDF)
2sd2422.pdf
isc Silicon NPN Darlington Power Transistor 2SD2422DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch
2sd2426.pdf
Ordering number:EN4716NPN Epitaxial Planar Silicon Transistor2SD242680V/2A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2084B[2SD2426]4.5Features1.9 2.610.51.2 1.4 Darlington connection. High DC current gain.1.20.51.60.51 2 31 : Emitter2 : Collector
2sd2425.pdf
DATA SHEETSILICON TRANSISTOR2SD2425NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES New package with dimensions in between those of smallsignal and powe
2sd2420.pdf
Power Transistors2SD2420Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification 4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE: 2 000 to 10 000 Dielectric breakdown voltage of the package: > 5 kV1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol Rati
2sd2423.pdf
2SD2423Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierFeaturesThe transistor with a built-in zener diode of surge absorb.OutlineUPAK2, 41231ID41. Base2. Collector2 k 0.5 3. Emitter(Typ) (Typ)4. Collector (Flange)32SD2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50
2sd2423.pdf
SMD Type TransistorsNPN Transistors2SD2423SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.1BID1.Base2 k 0.5 2.Collector(Typ) (Typ)E 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt
2sd2425.pdf
SMD Type TransistorsNPN Transistors2SD2425SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60V Complementary to 2SB15780.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: DDC142TH | 2SA1013-O | 2N2353 | 2N1031C
History: DDC142TH | 2SA1013-O | 2N2353 | 2N1031C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050