2SD2422 Specs and Replacement
Type Designator: 2SD2422
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO220F
2SD2422 Substitution
- BJT ⓘ Cross-Reference Search
2SD2422 datasheet
isc Silicon NPN Darlington Power Transistor 2SD2422 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch... See More ⇒
Ordering number EN4716 NPN Epitaxial Planar Silicon Transistor 2SD2426 80V/2A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2084B [2SD2426] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Darlington connection. High DC current gain. 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector ... See More ⇒
DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES New package with dimensions in between those of small signal and powe... See More ⇒
Detailed specifications: 2SC5696, 2SC5887, 2SCR586D3, 2SD1047E, 2SD133, 2SD1885C, 2SD2328, 2SD2397, D965, 2SD2490, 2SD2524, 2SD2593, 2SD2633, 2SD476N, 2SD711, 2SD882U-P, 3CA168
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