2SD2524 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2524
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1700 V
Tensión colector-emisor (Vce): 1700 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 4
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de transistor bipolar 2SD2524
2SD2524 Datasheet (PDF)
2sd2524.pdf
isc Silicon NPN Power Transistor 2SD2524DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sd2526.pdf
2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C Complementary to 2SB1641 Maximum Ratings (Ta = 25C)
2sd2525.pdf
2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm High DC current gain: 100 (min) Low saturation voltage: V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B Complementary to 2SB1640 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-em
2sd2527.pdf
Power Transistors2SD2527Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6
2sd2528.pdf
Power Transistors2SD2528Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6 0.1Ab
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
