2SD2593 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2593

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO220F

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2SD2593 datasheet

 ..1. Size:208K  inchange semiconductor
2sd2593.pdf pdf_icon

2SD2593

isc Silicon NPN Power Transistor 2SD2593 DESCRIPTION Low Collector Saturation Voltage- V = 1.2 (Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60

 8.1. Size:250K  toshiba
2sd2599.pdf pdf_icon

2SD2593

2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 8 V (Max.) CE (sat) High Speed t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

 8.2. Size:54K  panasonic
2sd2598.pdf pdf_icon

2SD2593

Transistor 2SD2598 Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 darlington 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency amplification 0.65 max. Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE +0.1 0.45 0.05 = 4000 to 20000. 2.5 0.5 2.5 0.5 A shunt resist

 8.3. Size:59K  panasonic
2sd2598 e.pdf pdf_icon

2SD2593

Transistor 2SD2598 Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 darlington 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency amplification 0.65 max. Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE +0.1 0.45 0.05 = 4000 to 20000. 2.5 0.5 2.5 0.5 A shunt resist

Otros transistores... 2SD1047E, 2SD133, 2SD1885C, 2SD2328, 2SD2397, 2SD2422, 2SD2490, 2SD2524, BC549, 2SD2633, 2SD476N, 2SD711, 2SD882U-P, 3CA168, 3DD102C, 3DD15B, 3DD15D