2SD882U-P Todos los transistores

 

2SD882U-P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD882U-P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar 2SD882U-P

 

2SD882U-P Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
2sd882u-p.pdf

2SD882U-P
2SD882U-P

isc Silicon NPN Power Transistor 2SD882U-PDESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.8V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in medium power linearand switching applicationsABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:297K  semtech
st2sd882u-p.pdf

2SD882U-P

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

 7.1. Size:535K  semtech
st2sd882u.pdf

2SD882U-P
2SD882U-P

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

 7.2. Size:222K  cn cbi
2sd882u.pdf

2SD882U-P
2SD882U-P

2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10 ms) ICP 7 AOT

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SD882U-P
  2SD882U-P
  2SD882U-P
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top