2SD882U-P Specs and Replacement

Type Designator: 2SD882U-P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

 2SD882U-P Substitution

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2SD882U-P datasheet

 ..1. Size:210K  inchange semiconductor

2sd882u-p.pdf pdf_icon

2SD882U-P

isc Silicon NPN Power Transistor 2SD882U-P DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.8V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 0.1. Size:297K  semtech

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2SD882U-P

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector... See More ⇒

 7.1. Size:535K  semtech

st2sd882u.pdf pdf_icon

2SD882U-P

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T... See More ⇒

 7.2. Size:222K  cn cbi

2sd882u.pdf pdf_icon

2SD882U-P

2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10 ms) ICP 7 A O T... See More ⇒

Detailed specifications: 2SD2397, 2SD2422, 2SD2490, 2SD2524, 2SD2593, 2SD2633, 2SD476N, 2SD711, BC639, 3CA168, 3DD102C, 3DD15B, 3DD15D, 3DD4515, BD134, BDY96D, BU2507AX

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