2SA1142
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1142
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 8
W
Tensión colector-base (Vcb): 180
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160
MHz
Capacitancia de salida (Cc): 5.8
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SA1142
2SA1142
Datasheet (PDF)
..2. Size:147K jmnic
2sa1142.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol3 BaseAbsolute maximum ratin
..3. Size:173K inchange semiconductor
2sa1142.pdf
isc Silicon PNP Power Transistor 2SA1142DESCRIPTIONLow Collector Saturation VoltageHigh voltage,fTComplement to Type 2SC2682Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBO
8.1. Size:138K toshiba
2sa1145.pdf
2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC2705. Small Collector Output Capacitance: Cob = 2.5 pF (typ.) High Transition Frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColl
8.3. Size:158K jmnic
2sa1141.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
8.4. Size:147K jmnic
2sa1146.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBO
8.5. Size:145K jmnic
2sa1147.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)
8.6. Size:238K lge
2sa1145.pdf
2SA1145 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE Features5.8006.200 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) 8.4008.800 High transition frequency: fT=200MHz(Typ.) 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.60013.800Symbol Parameter Value Units14.200VCBO
8.7. Size:197K cn sptech
2sa1141r 2sa1141q.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681APPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -115 VCBO
8.8. Size:222K inchange semiconductor
2sa1141.pdf
isc Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
8.9. Size:222K inchange semiconductor
2sa1146.pdf
isc Silicon PNP Power Transistor 2SA1146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =- 140V(Min)(BR)CEOComplement to Type 2SC2706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM R
8.10. Size:207K inchange semiconductor
2sa1145.pdf
isc Silicon PNP Power Transistor 2SA1145DESCRIPTIONLow collector output capacitanceHigh frequencyComplement to 2SC2705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency amplifier applicationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emitte
8.11. Size:208K inchange semiconductor
2sa1147.pdf
isc Silicon PNP Power Transistor 2SA1147DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2707Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
Otros transistores... 2SA1133
, 2SA1133A
, 2SA1135
, 2SA1136
, 2SA1137
, 2SA1138
, 2SA114
, 2SA1141
, 2SC2625
, 2SA1143
, 2SA1144
, 2SA1145
, 2SA1145O
, 2SA1145Y
, 2SA1146
, 2SA1147
, 2SA115
.
