All Transistors. 2SA1142 Datasheet

 

2SA1142 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1142
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 160 MHz
   Collector Capacitance (Cc): 5.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO126

 2SA1142 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1142 Datasheet (PDF)

 ..1. Size:64K  nec
2sa1142.pdf

2SA1142

 ..2. Size:147K  jmnic
2sa1142.pdf

2SA1142
2SA1142

JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol3 BaseAbsolute maximum ratin

 ..3. Size:173K  inchange semiconductor
2sa1142.pdf

2SA1142
2SA1142

isc Silicon PNP Power Transistor 2SA1142DESCRIPTIONLow Collector Saturation VoltageHigh voltage,fTComplement to Type 2SC2682Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBO

 8.1. Size:138K  toshiba
2sa1145.pdf

2SA1142
2SA1142

2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC2705. Small Collector Output Capacitance: Cob = 2.5 pF (typ.) High Transition Frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColl

 8.2. Size:32K  no
2sa1141 2sc2681 2sc2681.pdf

2SA1142

 8.3. Size:158K  jmnic
2sa1141.pdf

2SA1142
2SA1142

JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

 8.4. Size:147K  jmnic
2sa1146.pdf

2SA1142
2SA1142

JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBO

 8.5. Size:145K  jmnic
2sa1147.pdf

2SA1142
2SA1142

JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

 8.6. Size:238K  lge
2sa1145.pdf

2SA1142
2SA1142

2SA1145 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE Features5.8006.200 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) 8.4008.800 High transition frequency: fT=200MHz(Typ.) 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.60013.800Symbol Parameter Value Units14.200VCBO

 8.7. Size:197K  cn sptech
2sa1141r 2sa1141q.pdf

2SA1142
2SA1142

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681APPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -115 VCBO

 8.8. Size:222K  inchange semiconductor
2sa1141.pdf

2SA1142
2SA1142

isc Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 8.9. Size:222K  inchange semiconductor
2sa1146.pdf

2SA1142
2SA1142

isc Silicon PNP Power Transistor 2SA1146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =- 140V(Min)(BR)CEOComplement to Type 2SC2706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM R

 8.10. Size:207K  inchange semiconductor
2sa1145.pdf

2SA1142
2SA1142

isc Silicon PNP Power Transistor 2SA1145DESCRIPTIONLow collector output capacitanceHigh frequencyComplement to 2SC2705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency amplifier applicationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emitte

 8.11. Size:208K  inchange semiconductor
2sa1147.pdf

2SA1142
2SA1142

isc Silicon PNP Power Transistor 2SA1147DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2707Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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