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BU2508AW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2508AW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 80 pF
   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO247 SOT429
 

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BU2508AW Datasheet (PDF)

 ..1. Size:61K  philips
bu2508aw 1.pdf pdf_icon

BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 ..2. Size:61K  philips
bu2508aw.pdf pdf_icon

BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 ..3. Size:215K  inchange semiconductor
bu2508aw.pdf pdf_icon

BU2508AW

isc Silicon NPN Power Transistor BU2508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:82K  philips
bu2508af.pdf pdf_icon

BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

Otros transistores... 3DD102C , 3DD15B , 3DD15D , 3DD4515 , BD134 , BDY96D , BU2507AX , BU2507DX , 2SC1740 , BU2508DW , BU2515AX , BU2520AW , BU2523AF , BU2523AX , BU2527AW , BU2532AL , BU2532AW .

History: PH2931-20M | MMBTA93L

 

 
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