Справочник транзисторов. BU2508AW

 

Биполярный транзистор BU2508AW - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BU2508AW
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 80 pf
   Статический коэффициент передачи тока (hfe): 4
   Корпус транзистора: TO247 SOT429

 Аналоги (замена) для BU2508AW

 

 

BU2508AW Datasheet (PDF)

 ..1. Size:61K  philips
bu2508aw 1.pdf

BU2508AW
BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 ..2. Size:61K  philips
bu2508aw.pdf

BU2508AW
BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 ..3. Size:215K  inchange semiconductor
bu2508aw.pdf

BU2508AW
BU2508AW

isc Silicon NPN Power Transistor BU2508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:82K  philips
bu2508af.pdf

BU2508AW
BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

 7.2. Size:58K  philips
bu2508a 1.pdf

BU2508AW
BU2508AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resulti

 7.3. Size:175K  cn sptech
bu2508a.pdf

BU2508AW
BU2508AW

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU2508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Co

 7.4. Size:217K  inchange semiconductor
bu2508ax.pdf

BU2508AW
BU2508AW

isc Silicon NPN Power Transistor BU2508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.5. Size:216K  inchange semiconductor
bu2508a.pdf

BU2508AW
BU2508AW

isc Silicon NPN Power Transistor BU2508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.6. Size:212K  inchange semiconductor
bu2508af.pdf

BU2508AW
BU2508AW

isc Silicon NPN Power Transistor BU2508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

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