BU2708AX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2708AX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1700 V

Tensión colector-emisor (Vce): 825 V

Tensión emisor-base (Veb): 7.5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3

Encapsulados: SOT399

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BU2708AX datasheet

 ..1. Size:60K  philips
bu2708ax 1.pdf pdf_icon

BU2708AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di

 ..2. Size:60K  philips
bu2708ax.pdf pdf_icon

BU2708AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di

 ..3. Size:216K  inchange semiconductor
bu2708ax.pdf pdf_icon

BU2708AX

isc Silicon NPN Power Transistor BU2708AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 825V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.1. Size:191K  philips
bu2708af.pdf pdf_icon

BU2708AX

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