All Transistors. BU2708AX Datasheet

 

BU2708AX Datasheet and Replacement


   Type Designator: BU2708AX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Collector-Emitter Voltage |Vce|: 825 V
   Maximum Emitter-Base Voltage |Veb|: 7.5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: SOT399
 
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BU2708AX Datasheet (PDF)

 ..1. Size:60K  philips
 bu2708ax 1.pdf pdf_icon

BU2708AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 ..2. Size:60K  philips
 bu2708ax.pdf pdf_icon

BU2708AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 ..3. Size:216K  inchange semiconductor
 bu2708ax.pdf pdf_icon

BU2708AX

isc Silicon NPN Power Transistor BU2708AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:191K  philips
 bu2708af.pdf pdf_icon

BU2708AX

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