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BUV48BFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUV48BFI
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 65 W
   Tensión colector-base (Vcb): 1200 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: ISOWATT218
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BUV48BFI Datasheet (PDF)

 ..2. Size:215K  inchange semiconductor
buv48bfi.pdf pdf_icon

BUV48BFI

isc Silicon NPN Power Transistor BUV48BFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

 8.1. Size:218K  inchange semiconductor
buv48b.pdf pdf_icon

BUV48BFI

isc Silicon NPN Power Transistor BUV48BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

 9.1. Size:308K  motorola
buv48.pdf pdf_icon

BUV48BFI

Order this documentMOTOROLAby BUV48/DSEMICONDUCTOR TECHNICAL DATABUV48BUV48ASWITCHMODE II SeriesNPN Silicon Power Transistors15 AMPERESThe BUV48/BUV48A transistors are designed for highvoltage, highspeed, powerNPN SILICONswitching in inductive circuits where fall time is critical. They are particularly suited forPOWER TRANSISTORSlineoperated switchmode applica

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History: BLX41 | GI2716 | 2SB1016O | 2SC4596E | CJF715 | TD13005SMD | MP2894R

 

 
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