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BUW12AW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUW12AW

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 450 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO247, SOT429

Búsqueda de reemplazo de transistor bipolar BUW12AW

 

BUW12AW Datasheet (PDF)

1.1. buw12w buw12aw.pdf Size:79K _update_bjt

BUW12AW
BUW12AW

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

1.2. buw12w buw12aw.pdf Size:79K _philips

BUW12AW
BUW12AW

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

 1.3. buw12w buw12aw 1.pdf Size:79K _philips

BUW12AW
BUW12AW

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

1.4. buw12aw.pdf Size:213K _inchange_semiconductor

BUW12AW
BUW12AW

isc Silicon NPN Power Transistor BUW12AW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 450V(Min.) CEO(SUS) ·Low Collector Saturation Voltage- : V = 1.5V(Max.)@I = 5A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications. ABSO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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