BUX47AFI
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX47AFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65
W
Tensión colector-base (Vcb): 900
V
Tensión colector-emisor (Vce): 450
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 9
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta:
TO3PML
Búsqueda de reemplazo de transistor bipolar BUX47AFI
BUX47AFI
Datasheet (PDF)
..1. Size:214K inchange semiconductor
bux47afi.pdf 
isc Silicon NPN Power Transistor BUX47AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage
8.1. Size:215K st
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I
8.2. Size:203K inchange semiconductor
bux47a.pdf
isc Silicon NPN Power Transistor BUX47ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage
9.1. Size:10K semelab
bux47smd.pdf
BUX47SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 9A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
9.2. Size:203K inchange semiconductor
bux47.pdf
isc Silicon NPN Power Transistor BUX47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV
9.3. Size:204K inchange semiconductor
bux47b.pdf
isc Silicon NPN Power Transistor BUX47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supplies, CRT scanning,inverters, and other industrial applications.Absolute maximum ratings(Ta=25)SYMBO
Otros transistores... 2SA1801
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, 2SA1810
, 2SA1810B
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.
