BUX47AFI Datasheet. Specs and Replacement

Type Designator: BUX47AFI  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3PML

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BUX47AFI datasheet

 ..1. Size:214K  inchange semiconductor

 bux47afi.pdf pdf_icon

BUX47AFI

isc Silicon NPN Power Transistor BUX47AFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltage... See More ⇒

 8.1. Size:215K  st

 bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf pdf_icon

BUX47AFI

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I... See More ⇒

 8.2. Size:203K  inchange semiconductor

 bux47a.pdf pdf_icon

BUX47AFI

isc Silicon NPN Power Transistor BUX47A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltage ... See More ⇒

 9.1. Size:10K  semelab

 bux47smd.pdf pdf_icon

BUX47AFI

BUX47SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 400V IC = 9A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒

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Detailed specifications: BU406FI, BUT11AI, BUV48BFI, BUW11AW, BUW11W, BUW12AW, BUW12W, BUX18A, C945, KSD880W, KTC2200, KTC2202, KTD1945, MJ10012T, MJE3055AT, MJE340T, MN638S

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