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KTC2200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTC2200
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3P
 

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KTC2200 Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
 ktc2200.pdf pdf_icon

KTC2200

isc Silicon NPN Power Transistor KTC2200DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicaition.High voltage switching application.High speed DC-DC converter application.A

 8.1. Size:210K  inchange semiconductor
 ktc2202.pdf pdf_icon

KTC2200

isc Silicon NPN Power Transistor KTC2202DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicaition.High voltage switching application.High speed DC-DC converter application.A

 9.1. Size:909K  kexin
 ktc2238a.pdf pdf_icon

KTC2200

DIP Type TransistorsNPN TransistorsKTC2238ATO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features High Transition Frequency Complementary to KTA968A1.27 0.10 1.52 0.1021 30.80 0.10 +0.100.50 0.052.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1. Base2. Collector3. Emitter10.00 0.20 Absol

Otros transistores... BUV48BFI , BUW11AW , BUW11W , BUW12AW , BUW12W , BUX18A , BUX47AFI , KSD880W , C5198 , KTC2202 , KTD1945 , MJ10012T , MJE3055AT , MJE340T , MN638S , TIP2955T , TIP3055T .

 

 
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