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TIP2955T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP2955T

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 2 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO220

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TIP2955T Datasheet (PDF)

3.1. tip2955-3055.pdf Size:47K _st

TIP2955T
TIP2955T

TIP2955 TIP3055 ® COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon epitaxial-base planar NPN transistor mountend in TO-218 plastic package and intented for power switching circuits, series and shunt regulators, output 3 stages and hi-fi amplifiers. 2 The complementary PNP type is the TIP2955

3.2. tip2955.pdf Size:37K _st

TIP2955T
TIP2955T

TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP3055 is a silicon epitaxial-base planar NPN transistor mountend in TO-218 plastic package and intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. 3 The complementary PNP type is the TIP2955. 2 1 TO-218 INTERNAL SCHEMATI

 3.3. tip2955 tip3055.pdf Size:87K _st

TIP2955T
TIP2955T

TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche

3.4. tip3055 tip2955.pdf Size:61K _onsemi

TIP2955T
TIP2955T

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excell

 3.5. tip2955.pdf Size:81K _bourns

TIP2955T
TIP2955T

TIP2955 PNP SILICON POWER TRANSISTOR ● Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP3055 Series ● 90 W at 25°C Case Temperature B 1 ● 15 A Continuous Collector Current C 2 ● Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwi

3.6. tip2955 tip3055.pdf Size:107K _mospec

TIP2955T
TIP2955T

A A A

3.7. tip2955f tip3055f.pdf Size:290K _cdil

TIP2955T
TIP2955T

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-

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