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TIP2955T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP2955T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 70 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar TIP2955T

 

TIP2955T Datasheet (PDF)

 ..1. Size:217K  inchange semiconductor
tip2955t.pdf

TIP2955T
TIP2955T

isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

 7.1. Size:47K  st
tip2955-3055.pdf

TIP2955T
TIP2955T

TIP2955TIP3055 COMPLEMENTARY SILICON POWERTRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESDESCRIPTION The TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, output3stages and hi-fi amplifiers.2The complementary PNP type is the TIP2955

 7.2. Size:87K  st
tip2955 tip3055.pdf

TIP2955T
TIP2955T

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

 7.3. Size:37K  st
tip2955.pdf

TIP2955T
TIP2955T

TIP2955TIP3055COMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, outputstages and hi-fi amplifiers.3The complementary PNP type is the TIP2955.21TO-218INTERNAL SCHEMATI

 7.4. Size:237K  onsemi
tip3055 tip2955.pdf

TIP2955T
TIP2955T

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

 7.5. Size:81K  bourns
tip2955.pdf

TIP2955T
TIP2955T

TIP2955PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP3055 Series 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwi

 7.6. Size:107K  mospec
tip2955 tip3055.pdf

TIP2955T
TIP2955T

AAA

 7.7. Size:290K  cdil
tip2955f tip3055f.pdf

TIP2955T
TIP2955T

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

 7.8. Size:959K  jsmsemi
tip2955.pdf

TIP2955T
TIP2955T

TIP2955Silicon PNP Power TransistorsDESCRIPTION With TO-247 package Complement to type TIP3055 90 W at 25C case temperature 15 A continuous collector current APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

 7.9. Size:221K  inchange semiconductor
tip2955.pdf

TIP2955T
TIP2955T

isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifi

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