3DA27C Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DA27C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 180 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO-3

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3DA27C datasheet

 ..1. Size:225K  inchange semiconductor
 3da27c.pdf pdf_icon

3DA27C

isc Silicon NPN Power Transistor 3DA27C DESCRIPTION With TO-3 High DC Current Gain- h >10@I = 1.5A FE C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

 9.1. Size:32K  shaanxi
 3da14 3da27 3da28.pdf pdf_icon

3DA27C

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a

Otros transistores... SFT245, MD1803DFH, 3DD4205D-O-M-N-C, 3DD4205D-O-Z-N-C, 2N3055B, 2SC3907S, 2T837A, 3CD3C, BD135, 3DA608, 3DA98A, 3DA98B, 3DD164F, BFG540-X, BFP196W, BFR182TW, BU506A