All Transistors. 3DA27C Datasheet

 

3DA27C Datasheet and Replacement


   Type Designator: 3DA27C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-3
 

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3DA27C Datasheet (PDF)

 ..1. Size:225K  inchange semiconductor
 3da27c.pdf pdf_icon

3DA27C

isc Silicon NPN Power Transistor 3DA27CDESCRIPTIONWith TO-3High DC Current Gain-: h >10@I = 1.5AFE CHigh Collector-Emitter Breakdown Voltage-V = 180V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

 9.1. Size:32K  shaanxi
 3da14 3da27 3da28.pdf pdf_icon

3DA27C

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2444K | UMF28N | EFT323 | 2N5643 | E20180 | KRA307 | 2N271

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