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BFR182TW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFR182TW

Código: WRG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.035 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 7500 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: SOT-323

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BFR182TW Datasheet (PDF)

1.1. bfr182t bfr182tw.pdf Size:74K _1

BFR182TW
BFR182TW

BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 652 13 570 13 581 94 9280 2 3 23 BFR182T Marking: RG BFR182TW Marking: WRG Plastic cas

1.2. bfr182tw.pdf Size:222K _inchange_semiconductor

BFR182TW
BFR182TW

isc Silicon NPN RF Transistor BFR182TW DESCRIPTION ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15 V CBO

 4.1. bfr182w.pdf Size:55K _siemens

BFR182TW
BFR182TW

BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit

4.2. bfr182.pdf Size:71K _siemens

BFR182TW
BFR182TW

BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Col

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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