BUV26G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUV26G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 90 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5
Empaquetado / Estuche: TO-220
Búsqueda de reemplazo de transistor bipolar BUV26G
BUV26G Datasheet (PDF)
1.1. buv26g.pdf 
Size:214K _inchange_semiconductor
isc Silicon NPN Power Transistors BUV26G DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 90V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIM
5.1. buv26.pdf Size:57K _st
BUV26 ® MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 3 2 1 DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN TO-220 Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, s
5.2. buv26-d.pdf Size:45K _onsemi
BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high-speed applications. Features http://onsemi.com • Switchmode Power Supplies • High Frequency Converters 12 AMPERES • Relay Drivers NPN SILICON • Driver POWER TRANSISTORS • Pb-Free Package is Available* 90 VOLTS, 85 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MARKING Rating Symbol Value
5.3. buv26a.pdf Size:117K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION · ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter
5.4. buv26.pdf Size:214K _inchange_semiconductor
isc Silicon NPN Power Transistors BUV26 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 90V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMU
5.5. buv26f af.pdf Size:107K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
