BUV26G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUV26G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65
W
Tensión colector-base (Vcb): 180
V
Tensión colector-emisor (Vce): 90
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 14
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta:
TO-220
Búsqueda de reemplazo de transistor bipolar BUV26G
BUV26G
Datasheet (PDF)
..1. Size:214K inchange semiconductor
buv26g.pdf
isc Silicon NPN Power Transistors BUV26GDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIM
9.1. Size:57K st
buv26.pdf
BUV26MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 321DESCRIPTION The BUV26 is a Multiepitaxial Planar NPNTO-220Transistor in TO-220 package. It is intended foruse in high frequency and efficency converters,s
9.2. Size:45K onsemi
buv26-d.pdf
BUV26Switchmode Series NPNSilicon Power TransistorDesigned for high-speed applications.Featureshttp://onsemi.com Switchmode Power Supplies High Frequency Converters12 AMPERES Relay DriversNPN SILICON DriverPOWER TRANSISTORS Pb-Free Package is Available*90 VOLTS, 85 WATTSMAXIMUM RATINGS (TJ = 25C unless otherwise noted)MARKINGRating Symbol Value
9.3. Size:107K inchange semiconductor
buv26f af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF High Switching Speed APPLICATIONS Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE
9.4. Size:214K inchange semiconductor
buv26.pdf
isc Silicon NPN Power Transistors BUV26DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIMU
9.5. Size:117K inchange semiconductor
buv26a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter
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