Справочник транзисторов. BUV26G

 

Биполярный транзистор BUV26G - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BUV26G

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 65 W

Макcимально допустимое напряжение коллектор-база (Ucb): 180 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 14 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 5

Корпус транзистора: TO-220

Аналоги (замена) для BUV26G

 

 

BUV26G Datasheet (PDF)

1.1. buv26g.pdf Size:214K _inchange_semiconductor

BUV26G
BUV26G

isc Silicon NPN Power Transistors BUV26G DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 90V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIM

5.1. buv26.pdf Size:57K _st

BUV26G
BUV26G

BUV26 ® MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 3 2 1 DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN TO-220 Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, s

5.2. buv26-d.pdf Size:45K _onsemi

BUV26G
BUV26G

BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high-speed applications. Features http://onsemi.com • Switchmode Power Supplies • High Frequency Converters 12 AMPERES • Relay Drivers NPN SILICON • Driver POWER TRANSISTORS • Pb-Free Package is Available* 90 VOLTS, 85 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MARKING Rating Symbol Value

 5.3. buv26a.pdf Size:117K _inchange_semiconductor

BUV26G
BUV26G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION · ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter

5.4. buv26.pdf Size:214K _inchange_semiconductor

BUV26G
BUV26G

isc Silicon NPN Power Transistors BUV26 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 90V(Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMU

 5.5. buv26f af.pdf Size:107K _inchange_semiconductor

BUV26G
BUV26G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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