KSA940TU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon PNP Power Transistor KSA940TUDESCRIPTIONCollector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min)DC Current Gain: hFE= 40-140@ IC= -0.5AComplement to Type KSC2073TUMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output app

KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 150 VVCEO Collector-Emitter Voltage - 150 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 1.5 AIB Base Curr

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur