ST2310DHI Datasheet. Equivalente

 ..1. Size:247K  1
 st2310dhi.pdf

ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION HIGH END TVS ISOWATT218 DESCRIPTION The devi

 ..2. Size:247K  st
 st2310dhi.pdf

ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION HIGH END TVS ISOWATT218 DESCRIPTION The devi

 8.1. Size:239K  1
 st2310hi.pdf

ST2310HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR 1 MONITORS 15" AND HIGH END TVS ISOWATT218 DESCRIPTION The device is manu

 9.1. Size:872K  stansontech
 st2317s23rg.pdf

ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

 9.2. Size:216K  stansontech
 st2318srg.pdf

ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb

 9.3. Size:224K  stansontech
 st2319srg.pdf

ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

 9.4. Size:1265K  winsok
 wst2315.pdf

WST2315 P-Ch MOSFET General Description Product Summery The WST2315 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A -20V 50m and gate charge for most of the synchronous buck converter applications . Applications The WST2315 meet the RoHS and Green Product requirement,with full High Frequ

 9.5. Size:896K  winsok
 wst2314.pdf

WST2314 N-Channel MOSFET General Description Product Summery The WST2314 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 26m 5.5A for most of the small power switching and load switch applications. Applications The WST2314 meet the RoHS and Green Product requirement with full f

 9.6. Size:998K  winsok
 wst2316a.pdf

WST2316A N-Channel MOSFET General Description Product Summery The WST2316A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 26m 5.5A gate charge for most of the small power switching and load switch applications. Applications The WST2316A meet the RoHS and Green Product requirement with ful

 9.7. Size:1510K  winsok
 wst2319.pdf

WST2319 P-Ch MOSFET Product Summery General Description The WST2319 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -40V 35m -6A for most of the synchronous buck converter applications . Applications The WST2319 meet the RoHS and Green Product High Frequency Point-of-Load Synchronou

 9.8. Size:2084K  cn vbsemi
 st2315s23r.pdf

ST2315S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-