J13007-1A-H2
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J13007-1A-H2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 700
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar J13007-1A-H2
J13007-1A-H2
Datasheet (PDF)
5.1. Size:667K feihonltd
j13007-1a.pdf
TRANSISTOR J13007-1A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas
9.3. Size:113K jdsemi
j13003.pdf
RJ13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22
9.4. Size:104K sunroc
alj13003.pdf
SUNROCALJ13003 TRANSISTOR(NPN)FEATURESpower switching applicationsMAXIMUM RATINGS(Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current-Continuous 1.2 APC Collector Power Dissipation 25 WTJ Junction Temperature 150 Tstg Storage Temperature -55
9.5. Size:195K sunroc
alj13001.pdf
SUNROC ALJ13001 TRANSISTOR (NPN) TO-92 FEATURES 1. BASE power switching applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation
9.6. Size:103K sunroc
alj13002.pdf
SUNROCALJ13002 TRANSISTOR(NPN) FEATURES 1. EMITTER Power dissipation 2.COLLECTOR PCM:0.8W(Tamb=25) Collector current 3.BASE ICM:0.6A Collector-base voltage V(BR)CBO: 600V 1 2 3 Opcrating and storage junction temperature range TJ,Tstg:-65 to -150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specjfied): MIN TYP MAX UNITParameter Symbol Tes
9.7. Size:150K sunroc
alj13005.pdf
SUNROCALJ13005 TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) MAXI Parameter Value UnitsCollector-Base Voltage VCBO 700 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 9 VCollector Current IC 2.0 ACollector Power Dissipation PC 50 WJunction Temperature Tj 150 Storag Temperature -55150 Tstg ELECTRICAL CHARACTERISTICS
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