MMBT8550C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT8550C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT8550C
MMBT8550C Datasheet (PDF)
mmbt8550c mmbt8550d.pdf
MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package OAbsolute Maximum Ratings (T = 25 C) aParameter Symbol Value Unit Collector Bas
mmbt8550c mmbt8550d.pdf
MMBT8550C/DFeatures For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stages As complementary type of the NPN transistorMMBT8050C/D is recommendedAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base V
mmbt8550c mmbt8550d.pdf
MMBT8550-1.5A PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and LowPower Output Stages. As Complementary Type of the NPN TransistorMMBT8050-1.5A is Recommended.1.Base 2.Emitter 3.CollectorMarking: -C: X2-D: Y2Absolute Maximum Ratings Ratings at 25 ambient temperature unless other
mmbt8550.pdf
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mmbt8550lt1.pdf
RoHS MMBT8550LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-2332W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION2 Complement to MMPT8050LT11.1.BASE Collector-current:Ic=-500mA 2.EMITTER High Total Power Dissipation:Pc=225mW2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage
mmbt8550-c mmbt8550-d.pdf
MMBT8550 PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN TransistorMMBT8050 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 40 V CBOCollector Emitter Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC495Y | 2N4956-78
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050