MMBT8550C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT8550C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
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MMBT8550C datasheet
mmbt8550c mmbt8550d.pdf
MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas
mmbt8550c mmbt8550d.pdf
MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V
mmbt8550c mmbt8550d.pdf
MMBT8550-1.5A PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and Low Power Output Stages. As Complementary Type of the NPN Transistor MMBT8050-1.5A is Recommended. 1.Base 2.Emitter 3.Collector Marking -C X2 -D Y2 Absolute Maximum Ratings Ratings at 25 ambient temperature unless other
mmbt8550.pdf
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Otros transistores... 2SA1774Q, 2SA1774R, 2SA1774S, MMBT3904C, MMBT3906M, BCX56SQ-10, BCX56SQ-16, MMBT8050C, TIP2955, MMBT8550D, MMBT2045, 2N5401U, 2N5551U, 2SB772U-R, 2SB772U-Q, 2SB772U-P, 2SB772U-E
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